| PART |
Description |
Maker |
| M6MGE13VW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGE13VW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| FDZ191P0612 |
P-Channel 1.5V PowerTrench庐 WL-CSP MOSFET
|
Fairchild Semiconductor
|
| K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| FDZ663P |
-20V P-Channel 1.5 V Specified PowerTrenchThin WL-CSP MOSFET
|
Fairchild Semiconductor
|
| FDZ372NZ |
N-Channel 1.5 V Specified PowerTrench? Thin WL-CSP MOSFET
|
Fairchild Semiconductor
|
| FDZ391P |
-20V P-Channel 1.5 V PowerTrenchThin WL-CSP MOSFET
|
Fairchild Semiconductor Corporation
|
| BRCB008GWZ-3 BRCB008GWZ-3E2 |
WL-CSP EEPROM
|
ROHM
|
| BRCB016GWL-3 BRCB016GWL-3E2 |
WL-CSP EEPROM
|
ROHM
|
| BRCD064GWZ-3E2 |
WL-CSP EEPROM
|
ROHM
|
